The COPRA DN501-GRPE Round Plasma Source is a flange mounted RF-ICP source solutions for wafer sized substrates of up to 12". As smaller COPRA DN401-GRPE the COPRA DN501-GRPE Round Plasma Source series enable highly competitive etching and oxidation/nitridation processes and can be used with any type of gas. These sources are nowadays enabling benchmarking post oxidation/nitridation of metallized films. They are customizable to be used in reactive etching processes requiring damage preventing low ion energy inputs paired with excellent ion current densities. These COPRA DN501-GRPE Round Plasma Source solutions handle tight semiconductor specific requirements.