COPRA Round Sources

The COPRA DN 160CF are our smallest source solutions out of our DN family. They are designed to be used for Research and Development use in the field of Plasma Surface Science on small substrates of up to 3" wafer size. High plasma densities in combination with dissociation degrees of up to 90% enable accurate surface cleaning, activation and etching as also post oxidation/nitridation of PVD processes. Those sources are also enabling basic PECVD processes on small substrate sizes. The results achieved by the COPRA DN160CF sources are typically transferable on larger substrate dimensions by using the COPRA plasma sources for larger substrate sizes.

Main Applications

COPRA DN160-CF
Ø 84 mm
neutral Plasma Beam (no filament)
Manual Match
Ø 80 mm (3" Wafer)
-
DN160-CF
13,56 MHz
0,6 kW
-
1x10-4 to 1x10-2 mbar
N
-
2x flex tube 6 mm
>2L/min
VCR 1/4
VA
20 kg

The COPRA DN200 CF are designed to be used for Research and Development in the field of Plasma Surface Science on small substrates of up to 3" wafer size. High plasma densities in combination with dissociation degrees of up to 90% enable accurate activation/cleaning and etching as also post oxidation/nitridation of PVD processes. Those sources are also enabling basic PECVD processes. They are suitable for UHV requirements. The result achieved by the COPRA DN200CF are transferable on larger substrate dimensions by using the COPRA plasma sources for larger substrate sizes.

Main Applications

COPRA DN200 CF
Ø 122 mm
neutral Plasma Beam (no filament)
Manual Match
Ø 100 mm (4" Wafer)
-
DN200-CF
13,56 MHz
0,6 kW
-
1x10-4 to 1x10-2 mbar
N
-
2x flex tube 6 mm
>2L/min
VCR 1/4
VA
25 kg

The COPRA DN 200-X flange mounted round RF-ICP sources are typically used for substrates sizes of up to 4"size and designed for PECVD, E-Gun Assist, Sputter-Assist, Chemical Etching, cleaning/activation, PALD, DLC. They can be powered with up to 1,2kW and represent the smallest COPRA DN source for industrial productions. In relation to their small footprint they are very attractive to be used in installations where small dimensions are needed. The variety of process applications in relation to their small footprint and make these type of sources attractive working horses. The results achieved by the COPRA DN200-X are transferable on larger substrate dimensions by using the COPRA plasma sources for larger substrate sizes. 

Main Applications

COPRA DN200-X
Ø 110 mm
neutral Plasma Beam (no filament)
Manual Match
Ø 100 mm (4" Wafer)
-
DN200-ISO-K
13,56 MHz
1,2 kW
-
1x10-4 to 1x10-1 mbar
N
Profibus/Serial
2x flex tube 6 mm
>2L/min
Swagelok 4 mm
AL
22 kg

The COPRA DN250 are flange mounted round RF-ICP source solutions for substrate sizes of up to 6". Those sources are designed to be used both for Research and Development in the field of Plasma Surface Science as also in particular for activation and etching applications and oxidation/nitridation processes. The higher degree of customization properties the COPRA DN250 series carry with enable PECVD or Etching processes with the freedom of use of any gas type and and are crucial for customization needs in industrial production set ups. Highest plasma densities in combination with dissociation degrees of up to 90% will get most of your low pressure plasma applications to a new qualitative level as the ease of generation of atomic species the CCR COPRA technology provides will make your plasma coating/etching processes highly reactive. The COPRA plasma source solutions are scalable. In many cases the process developments made with our smaller source solutions are being transferred on substrates of larger dimensions by using the COPRA plasma sources for larger substrate sizes which are completing our RF-ICP plasma source solution portfolio. 

Main Applications

COPRA DN250-CF
Ø 162 mm
neutral Plasma Beam (no filament)
Manual Match
Ø 150 mm (6" Wafer)
-
DN250-CF
13,56 MHz
1,6 kW
-
1x10-4 to 1x10-2 mbar
7/16
Profibus/Serial
2x flex tube 6 mm
>2L/min
VCR 1/4
VA
25 kg

The COPRA DN250-ISO-F 3kW RF-ICP flange mounted round source solutions for substrate sizes of up to 6" can be powered up to 3kW. This source type do have excellent E-Gun or Sputter-Assist, Cleaning/Activation and DLC coating capabilities. The ease of generation of atomic species of the gases you run through the COPRA DN250-ISO-F 3KW CCR is highly appreciated for state of the art PVD Assist requirements. The COPRA plasma source solutions are scalable. In many cases the process developments made with our smaller source solutions are being transferred on substrates of larger dimensions by using the COPRA plasma sources for larger substrate sizes which are completing our RF-ICP plasma source solution portfolio. 

Main Applications

COPRA DN250-ISO-F
Ø 160 mm
neutral Plasma Beam (no filament)
Integrated Remote Match
Ø 150 mm (6" Wafer)
-
DN250-ISO-F
13,56 MHz
3 kW
Yes
1x10-4 to 1x10-2 mbar
7/16
Profibus/Serial
2x flex tube 6 mm
>2L/min
VCR 1/4
VA
35 kg

The COPRA DN401 CF are flange mounted round RF-ICP source solutions for substrate sizes of up to 8". They enable highly competitive etching and oxidation/nitridation processes. The COPRA DN400 series are being used with any type of gases and provide industrial proven solutions for your production setups. These sources are enabling state of the art post oxidation of metallized films and can significantly optimize the stoichometry of your reactively sputtered films on wafer sizes of up to 8". Highest plasma densities in combination with dissociation degrees of up to 90% will get most of your low pressure plasma applications to a new qualitative level as the ease of generation of atomic species the CCR COPRA technology provides will make your plasma processes highly reactive and responsive. The COPRA plasma source solutions are scalable. In many cases the process developments made with our smaller source solutions are being transferred on substrates of larger dimensions by using the COPRA plasma sources for larger substrate sizes which are completing our RF-ICP plasma source solution portfolio.

Main Applications

COPRA DN401
Ø 244 mm
neutral Plasma Beam (no filament)
Integrated Remote Match
Ø 200 mm (8"Wafer)
-
CCR Flange
13,56 MHz
5 kW
-
1x10-4 to 1x10-2 mbar
7/16
Profibus/Serial
2x flex tube 6 mm
>2L/min
VCR 1/4
AL
40 kg

The COPRA DN501 CF are flange mounted round RF-ICP source solutions for wafer sizes of up to 12". As the COPRA DN401 CF series they enable highly competitive etching and oxidation/nitridation processes and can be used with any type of gas. These sources are nowadays enabling benchmarking post oxidation/nitridation of metallized films. They are customizable to be used in reactive etching processes requiring damage preventing low ion energy inputs paired with excellent ion current densities. These COPRA DN501 CF solutions handle tight semiconductor specific requirements. 

Main Applications

COPRA DN501
Ø 380 mm
neutral Plasma Beam (no filament)
Integrated Remote Match
Ø 300 mm (12" Wafer)
-
CCR Flange
13,56 MHz
5 kW
-
2x10-4 to 1x10-2 mbar
7/16
Profibus/Serial
2x flex tube 6 mm
>2L/min
VCR 1/4
AL
45 kg

CCR is continously evolving, pioneering new approaches or reinventing existing ones stretching ourselves to better in everything we do. More than 20 years in the customization of RF-plasma sources are important values to be considered in order to find the best possible solution. Should you have a specific need for a customized solution please do not hesitate to contact us. We can customize any of our products and look forward to become your valuable supplier.