COPRA Reactive Ion Etching

The COPRA Plasma Source solutions are customizable for different forms of both plasma etching with reactive gases as also Ion Milling/Sputter Etching applications on wafer sizes of up to 12 Inch. Due to the unique COPRA specific high ion current density the use of reactive gases at lowest ion energy inputs avoiding defects is enabling extraordinary control of your etching requirements.

COPRA Reactive Ion Etching / Applications

Controlled COPRA Reactive Ion Etching with Chlorine/Fluorine Gases with low Ion Energy input at low and high vacuum pressures.

Reactive Ion Etching with Oxygen Gas (Ashing) for photoresist removal with low Ion Energy input at low and high vacuum pressures

Ion Milling / Sputter Etching by Ion Bombardment at low and high vacuum pressures