| Application | Composition | Technology | Characterization | Single Wafer | 4 Wafer Batch | Gen3 to Gen5 |
| Amorphous Silicon Absorber | a-Si:H | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
| Micro Crystalline Silicon Absorber | µ-c-Si:H | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
| Zincoxid Front Contact | B-doped ZnO | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
| Zincoxid Buffer Layer | i-ZnO | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
| Anti-reflective-layer | SixNy | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
| Barrier Layer | Si3N4 | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
| Barrier Layer | Al203 | PECVD | Properties | RS400 | RS9, LS9 | RS10, RS11 |
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