CCR Technology GmbH

PECVD		Static Rates	Precursor	Reactive Gas	ta-C:H coated Wafer
Amorphous Silicon	a-Si:H	10 nm per sec	Silan	Hydrogen
Nano crystalline Silicon	nc-Si:H	4 nm per sec	Silan	Hydrogen
Micro crystalline Silicon	µc-Si:H	2 nm per sec	Silan	Hydrogen
Poly crystalline Silicon	pc-Si:h	1 nm per sec	Silan	Hydrogen
Silicon Nitride	Si3N4	4 nm per sec	Silan	Amonia


Diamond Like Carbon	ta-C:H	5 nm per sec	Acetylene	none

Zinkoxid	ZnO	3 nm per sec	DMZ	Oxygen
Alumina	AL2O3	3 nm per sec	TMA	Oxygen
Titaniumoxid	TiO2	3 nm per sec	TiCl4	Oxygen